EPC Space LLC of Haverhill, MA, USA has introduced two new radiation-hardened (rad-hard) gallium nitride (GaN) transistors with ultra-low on-resistance and high-current capability for high-power-density solutions that are said to be lower cost and more efficient than the nearest comparable rad-hard silicon MOSFET. The devices are supplied in hermetic packages in very small footprints. ..
Source: https://www.semiconductor-today.com/new ... 0823.shtml