SCT Aixtron launches G10-GaN MOCVD platform for power and RF devices

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SCT Aixtron launches G10-GaN MOCVD platform for power and RF devices

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At the SEMICON Taiwan 2023 event in Taipei (6-8 September), deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has launched its new G10-GaN cluster metal-organic chemical vapor deposition (MOCVD) platform for gallium nitride (GaN)-based power and radio frequency (RF) devices, offering what is claimed to be best-in-class performance, an all-new compact design, and overall lowest cost per wafer...

Source: https://www.semiconductor-today.com/new ... 0923.shtml
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