Infineon Technologies AG of Munich, Germany says that its new CoolSiC hybrid discrete with TRENCHSTOP 5 Fast-Switching insulated-gate bipolar transistor (IGBT) and CoolSiC Schottky diode has been chosen by VMAX (a Chinese manufacturer of power electronics and motor drives for new energy vehicles) for its next-generation 6.6kW OBC/DC-DC on-board chargers. Infineon’s components come in a D2PAK package and combine ultra-fast TRENCHSTOP 5 IGBTs with half-rated free-wheeling SiC Schottky barrier diodes to achieve the optimum cost-performance ratio for both hard and soft-switching topologies. Due to their performance, optimized power density and quality, the power devices are suitable for VMAX’s on-board chargers...
Source: https://www.semiconductor-today.com/new ... 0224.shtml