NXP Semiconductors N.V. of Eindhoven, The Netherlands has announced a collaboration with Hitachi Energy to accelerate the adoption of silicon carbide (SiC) power semiconductor modules in e-mobility. The project aims to provide more efficient, reliable and functionally safe SiC MOSFET-based solutions for powertrain inverters consisting of NXPs GD3160 single-channel high-voltage (HV) isolated gate drivers and Hitachi Energy’s RoadPak automotive SiC MOSFET power modules...
Source: http://www.semiconductor-today.com/news ... 0322.shtml