Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — says that its SuperGaN FETs are being used in the new 3.6kW power supply of Hangzhou Boco Electronics Co Ltd. The 12V AC-to-DC power supply achieves a peak efficiency of greater than 96% and is designed to be used in rugged environments caused by ultra-demanding applications such as crypto-mining rigs and high-performance data-center systems...
Source: http://www.semiconductor-today.com/news ... 0322.shtml