Infineon Technologies AG of Munich, Germany has expanded its lawsuit pending before the District Court for the Northern District of California against China-based gallium nitride-on-silicon (GaN-on-Si) power solutions firm Innoscience (Zhuhai) Technology Co Ltd as well as Innoscience America Inc and affiliates, adding claims of infringement of three additional gallium nitride (GaN)-related patents: US Patent Nos. 8,686,562 (‘Refractory metal nitride capped electrical contact and method for fabricating same’), 9,070,755 (‘Transistor having elevated drain finger termination’) and 8,264,003 (‘Merged cascode transistor’). These join the already disputed US Patent No. 9,899,481 (‘Electric component and switch circuit’)...
Source: https://www.semiconductor-today.com/new ... 0724.shtml