At the 70th annual IEEE International Electron Devices Meeting (IEDM 2024) in San Francisco, CA, USA (7–11 December), nanoelectronics research center imec of Leuven, Belgium has presented results on the heterointegration of indium phosphide (InP) chiplets on a 300mm RF silicon interposer. The chiplets’ integration comes with a negligible 0.1dB insertion loss at 140GHz. In addition, no performance degradation is observed upon assembly of a two-stage InP power amplifier (PA). As the first to achieve this, imec claims that its findings mark a milestone in developing compact, energy-efficient modules for above-100GHz communication and radar sensing...
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