Tokyo-based Oki Electric Industry Co Ltd, in collaboration with Japan-based NTT Innovative Devices Corp, has established mass-production technology for high-power terahertz devices using its proprietary crystal film bonding (CFB) technology for heterogeneous material bonding to bond indium phosphide (InP)-based uni-traveling carrier photodiodes (UTC-PD) (a PiN junction photodiode that selectively uses electrons as active carriers) onto silicon carbide (SiC) with what are claimed to be excellent heat dissipation characteristics for improved bonding yields. UTC-PDs could operate faster and with much wider output linearity simply by excluding the hole transport contribution to the diode operation...
Source: https://www.semiconductor-today.com/new ... 0625.shtml