SCT Toshiba and SICC sign MOU on silicon carbide power semi wafer collaboration

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SCT Toshiba and SICC sign MOU on silicon carbide power semi wafer collaboration

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Toshiba Electronic Devices & Storage Corp of Kawasaki, Japan and Chinese silicon carbide (SiC) supplier SICC Co Ltd have signed a memorandum of understanding (MOU) to explore collaboration in improving the characteristics and quality of silicon carbide (SiC) power semiconductor wafers developed and manufactured by SICC, and expanded supply of stable, high-quality wafers from SICC to Toshiba. The two firms will discuss the scope of their joint efforts and mutual support...

Source: https://www.semiconductor-today.com/new ... 0825.shtml
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