SCT Mitsubishi Electric adds 400A, 1200V dual module to SiC power device lineup

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SCT Mitsubishi Electric adds 400A, 1200V dual module to SiC power device lineup

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Mitsubishi Electric has launched the FMF400DY-24B, a 400A, 1200V dual silicon carbide (SiC) MOSFET power module that includes an anti-parallel, low Vf, zero-recovery-loss SiC Schottky barrier diode (SBD)...

Source: http://www.semiconductor-today.com/news ... 0522.shtml
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