SCT onsemi to develop power devices using GlobalFoundries’ 200mm lateral GaN-on-Si

Post Reply
admin
Site Admin
Articles: 0
Posts: 3899
Joined: Sat Jul 11, 2026 7:10 pm

SCT onsemi to develop power devices using GlobalFoundries’ 200mm lateral GaN-on-Si

Post by admin »

Intelligent power and sensing technology firm onsemi of Scottsdale, AZ, USA has signed a collaboration agreement with GlobalFoundries of Malta, NY (GF, the only US-based pure-play foundry with a global manufacturing footprint, including facilities in the USA, Europe and Singapore) to develop and manufacture gallium nitride (GaN) power products using GF’s 200mm eMode GaN-on-silicon process for critical markets, starting with 650V...

Source: https://www.semiconductor-today.com/new ... 1225.shtml
Post Reply