Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that, by replacing traditional silicon FETs with its 350V, EPC2050 enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistor (FET), Sensitron of Hauppauge, NY, USA – which manufactures high-reliability power electronic components for defense, aerospace, space and medical markets – was able to reduce the size of its solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction...
Source: http://www.semiconductor-today.com/news ... 0522.shtml