Navitas Semiconductor Corp of Torrance, CA, USA — which provides GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors — has launched its 5th-generation GeneSiC technology platform. The High Voltage (HV) SiC Trench-Assisted Planar (TAP) MOSFET technology is said to be a significant technological leap over previous generations and will deliver a 1200V line of MOSFETs. It complements Navitas’ ultra-high-voltage (UHV) 2300V and 3300V technologies from the 4th-generation GeneSiC platform, extending Navitas’ technology for AI data centers, grid and energy infrastructure, and industrial electrification...
Source: https://www.semiconductor-today.com/new ... 0226.shtml