SCT Infineon launches CoolGaN 600V GIT HEMT portfolio

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SCT Infineon launches CoolGaN 600V GIT HEMT portfolio

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Infineon Technologies AG of Munich, Germany says that it has integrated the CoolGaN 600V hybrid-drain-embedded gate injection transistor (HD–GIT) technology into its in-house manufacturing. The firm is now releasing the complete portfolio of its GaN devices to the broader market...

Source: https://www.semiconductor-today.com/new ... 0523.shtml
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