Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC- and AEC-Q101-qualified gallium nitride (GaN) field-effect transistors (FETs) for high-voltage power conversion — has announced the availability of its 1200V FET simulation model and preliminary datasheet. The normally-off TP120H070WS FET is claimed to be the only 1200V GaN-on-sapphire power semiconductor introduced to date, making its model the first of its kind...
Source: https://www.semiconductor-today.com/new ... 0523.shtml