Innoscience Technology of Suzhou, China has collaborated with the Bern University of Applied Sciences (BFH) to deliver a reference demo that employs its 650V InnoGaN gallium nitride high-electron-mobility transistor (HEMT) devices in a multi-level topology to address 850VDC applications such as e-mobility motor drivers, solar and industrial inverters, electric vehicle (EV) fast chargers, and potentially EV drivetrains...
Source: https://www.semiconductor-today.com/new ... 0523.shtml