SCT Toshiba launches SiC 650V Schottky barrier diodes with forward voltage of 1.2V

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SCT Toshiba launches SiC 650V Schottky barrier diodes with forward voltage of 1.2V

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Japan-based Toshiba Electronic Devices & Storage Corp (TDSC) – which was spun off from Toshiba Corp in 2017 – has launched twelve 650V silicon carbide (SiC) Schottky barrier diodes (SBDs) based on its latest third-generation technology. Now shipping in volume, the new devices are specifically intended for use in efficiency-critical industrial equipment applications including switching power supplies, electric vehicle (EV) charging stations and photovoltaic (PV) inverters...

Source: https://www.semiconductor-today.com/new ... 0723.shtml
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