At the 69th International Electron Devices Meeting (IEEE IEDM 2023) in San Francisco (9–13 December), nanoelectronics research center imec of Leuven, Belgium has presented aluminum nitride/gallium nitride (AlN/GaN) metal-insulator-semiconductor high-electron mobility transistors (MISHEMTs) on 200mm silicon with high output power and energy efficiency while operating at 28GHz. This outperforms other GaN MISHEMT device technology in terms of performance, it is claimed, while adoption of silicon substrate provides a major cost advantage for industrial manufacturing...
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