SCT Navitas highlights EV high-speed hybrid power semiconductor advances in keynote at China Innovation Summit

Post Reply
admin
Site Admin
Articles: 0
Posts: 3899
Joined: Sat Jul 11, 2026 7:10 pm

SCT Navitas highlights EV high-speed hybrid power semiconductor advances in keynote at China Innovation Summit

Post by admin »

Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA participated in the China Electronic Hotspot Solutions Innovation Summit in Shenzhen on 27 April, which gathered key players in power semiconductors and associated customer design teams for innovations in electric vehicles (EV) such as 800V supercharging, battery management, intelligent connected vehicle electronics, and high-power digital power supplies. EV OEM attendees this year included experts from Voyah and Dongfeng...

Source: https://www.semiconductor-today.com/new ... 0524.shtml
Post Reply