Chicago-based fabless firm Tagore Technology Inc - which was founded in 2011 and has design centers in Arlington Heights, IL, USA and Kolkata, India developing gallium nitride-on-silicon (GaN-on-Si) and gallium nitride-on-silicon carbide (GaN-on-SiC) technology for RF and power management applications — has introduced the TS8728N and TS8729N asymmetrical reflective single-pole double-throw (SPDT) switches designed for broadband, high-power switching applications. The new feature-rich switches offer what is claimed to be best-in-class insertion loss, power handling, high linearity, and high isolation performance and are well suited for L- and S-band radar and cellular infrastructure applications...
Source: https://www.semiconductor-today.com/new ... 0624.shtml