Altum RF of Eindhoven, The Netherlands (which designs high-performance RF to millimeter-wave solutions for commercial and industrial applications) has announced three new gallium arsenide (GaAs) pHEMT monolithic microwave integrated circuit (MMIC) amplifiers targeting applications covering Q-, V- and E-bands. Using the PP10-20 GaAs pseudomorphic high-electron-mobility transistor (pHEMT) technology of WIN Semiconductors Corp of Taoyuan City, Taiwan – the largest pure-play compound semiconductor wafer foundry – the compact die amplifiers are said to achieve high gain and low noise, while simplifying design-in for engineers by using single-gate and single-drain supplies...
Source: http://www.semiconductor-today.com/news ... 0422.shtml