Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor of Torrance, CA, USA has released its 4.5kW AI data-center power supply reference design, with optimized GaNSafe and Gen-3 ‘Fast’ (G3F) SiC power components. The optimized design enables what is claimed to be the world’s highest power density with 137W/in3 and over 97% efficiency...
Source: https://www.semiconductor-today.com/new ... 0724.shtml