SCT Toshiba’s launches 1200V third-generation SiC Schottky barrier diodes

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SCT Toshiba’s launches 1200V third-generation SiC Schottky barrier diodes

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Japan-based Toshiba Electronic Devices & Storage Corp (TDSC) – which was spun off from Toshiba Corp in 2017 – has added the TRSxxx120Hx Series of 1200V products to its lineup of third-generation silicon carbide (SiC) Schottky barrier diodes (SBD) for industrial equipment, such as photovoltaic inverters, EV charging stations, and switching power supplies for industrial equipment. Toshiba has started shipments of the ten new products in the series: five in a TO-247-2L package and five in a TO-247 package...

Source: https://www.semiconductor-today.com/new ... 0924.shtml
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