SCT India’s Solid State Physics Lab develops SiC wafers and GaN HEMTs for up to X-band

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SCT India’s Solid State Physics Lab develops SiC wafers and GaN HEMTs for up to X-band

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Solid State Physics Laboratory, a research arm of the Indian Ministry of Defence’s Defence Research and Development Organisation (DRDO), has developed indigenous processes for growing and manufacturing 4-inch-diameter silicon carbide (SiC) wafers, as well as fabricating gallium nitride (GaN) high-electron-mobility transistors (HEMTs) up to 150W and monolithic microwave integrated circuits (MMICs) up to 40W for applications operating at up to X-band frequencies...

Source: https://www.semiconductor-today.com/new ... 1124.shtml
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