SCT CGD and IFPEN demo GaN-based 800VDC inverter that outperforms SiC

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Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — and IFP Energies nouvelles (IFPEN) — a French public research and training organization in the fields of energy, transport and the environment — have developed a demo that confirms the suitability of CGD’s ICeGaN650V GaN ICs in a multi-level, 800VDC inverter...

Source: https://www.semiconductor-today.com/new ... 1124.shtml