SCT EPC Space launches 300V rad-hard GaN FET

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SCT EPC Space launches 300V rad-hard GaN FET

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EPC Space LLC of Haverhill, MA, USA (which provides high-reliability radiation-hardened enhancement-mode gallium nitride-on-silicon transistors and ICs for power management in space and other harsh environments) has launched the EPC7030MSH, a rad-hard (RH) 300V GaN FET that delivers what is claimed to be unmatched performance for high-voltage, high-power space applications, including next-generation satellite power plants and electric propulsion systems...

Source: https://www.semiconductor-today.com/new ... 0625.shtml
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