At the 71st IEEE International Electron Devices Meeting (IEDM 2025) in San Francisco (6–10 December), micro/nanotechnology R&D center CEA-Leti of Grenoble, France and STMicroelectronics of Geneva, Switzerland presented results showcasing key enablers for a new high-performance and versatile RF silicon platform cointegrating best-in-class active and passive devices used in RF and optical front-end modules (FEM). Their paper details 3D sequential integration of silicon-germanium (SiGe) heterojunction bipolar transistors (HBT), RF silicon-on-insulator (SOI) switches, and high-quality passives on a single wafer — opening a path to highly integrated, low parasitic, and targeting cost-efficient systems for next-generation wireless and wireline communications...
Source: https://www.semiconductor-today.com/new ... 1225.shtml