Fabless semiconductor company Tagore Technology Inc – which was founded in January 2021 and has design centers in Arlington Heights, IL, USA and Kolkata, India developing gallium nitride-on-silicon (GaN-on-Si) technology for RF and power management applications – has launched ultra-low-noise amplifiers (LNA) and a companion linear power amplifier (PA) driver. Tunable from 100MHz to 5GHz and operating from a 2.7-5V supply, the family of devices is suitable for a broad range of applications including 5G infrastructure and high-performance Satellite Digital Audio Radio Service (SDARS)...
Source: http://www.semiconductor-today.com/news ... 0622.shtml