Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA has qualified its 1200V silicon carbide (SiC) MOSFET platform, on its SiC substrates, to stringent automotive standard requirements and is expanding its relationship with GE by signing a three-year technology access agreement (TAA) with GE Research to gain access to the Lab’s SiC module technology and team of experts to accelerate customer design-in engagement activities...
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