SCT ROHM’s ultra-high-speed control IC technology maximizes performance of GaN switching devices

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SCT ROHM’s ultra-high-speed control IC technology maximizes performance of GaN switching devices

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Due to their superior high-speed switching characteristics the adoption of GaN devices has expanded in recent years. However, the speed of control ICs (for directing the driving of these devices) has become challenging...

Source: https://www.semiconductor-today.com/new ... 0323.shtml
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